Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張立 | en_US |
| dc.contributor.author | 何焱騰 | en_US |
| dc.date.accessioned | 2014-12-16T06:13:31Z | - |
| dc.date.available | 2014-12-16T06:13:31Z | - |
| dc.date.issued | 2014-02-01 | en_US |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.govdoc | C30B029/16 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/104197 | - |
| dc.description.abstract | 本發明係有關於一種以單晶氧化物作為基板成長非極性m面磊晶層之方法，包括：提供一具有鈣鈦礦結構之單晶氧化物；選擇該單晶氧化物之一平面作為一基板；以及在該基板上以氣相沉積法生長一具有纖鋅礦結構半導體之非極性m面磊晶層。本發明亦提供一種以前述方法成長之具有非極性m面之磊晶層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 以單晶氧化物作為基板成長纖鋅礦結構半導體非極性ｍ面磊晶層之方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I425559 | zh_TW |
| Appears in Collections: | Patents | |
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