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dc.contributor.author祁甡en_US
dc.contributor.author陳南光en_US
dc.date.accessioned2014-12-16T06:13:31Z-
dc.date.available2014-12-16T06:13:31Z-
dc.date.issued2006-04-01en_US
dc.identifier.govdocG02B006/255zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104201-
dc.description.abstract本案係指一種雷射微加工處理全光纖型元件之製作方法,係直接對光纖之部分光殼施以雷射切削去除,使得光纖內的消逝場(evanescent field)能夠裸露出來,切削的深度可藉由量測雷射光干涉條紋間距的方法得知;雷射切削形成的消逝場之作用長度則可透過改變光纖曲率半徑控制。將側削後之光纖彼此靠合,使其光消逝場能夠發生耦合後予以加熱熔合或施以熔燒拉錐(fuse–tapering),即可用來製作光纖耦合器、光塞取多工器(add/drop multiplexer)、光纖窄波道多工/解多工器及光纖光柵等光纖元件。zh_TW
dc.language.isozh_TWen_US
dc.title雷射微加工處理全光纖型元件之製作方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200610991zh_TW
Appears in Collections:Patents


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