Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 祁甡 | en_US |
dc.contributor.author | 陳南光 | en_US |
dc.date.accessioned | 2014-12-16T06:13:31Z | - |
dc.date.available | 2014-12-16T06:13:31Z | - |
dc.date.issued | 2006-04-01 | en_US |
dc.identifier.govdoc | G02B006/255 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104201 | - |
dc.description.abstract | 本案係指一種雷射微加工處理全光纖型元件之製作方法,係直接對光纖之部分光殼施以雷射切削去除,使得光纖內的消逝場(evanescent field)能夠裸露出來,切削的深度可藉由量測雷射光干涉條紋間距的方法得知;雷射切削形成的消逝場之作用長度則可透過改變光纖曲率半徑控制。將側削後之光纖彼此靠合,使其光消逝場能夠發生耦合後予以加熱熔合或施以熔燒拉錐(fuse–tapering),即可用來製作光纖耦合器、光塞取多工器(add/drop multiplexer)、光纖窄波道多工/解多工器及光纖光柵等光纖元件。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 雷射微加工處理全光纖型元件之製作方法 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | 200610991 | zh_TW |
Appears in Collections: | Patents |
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