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dc.contributor.author柯明道en_US
dc.contributor.author林昆賢en_US
dc.date.accessioned2014-12-16T06:13:33Z-
dc.date.available2014-12-16T06:13:33Z-
dc.date.issued2005-12-16en_US
dc.identifier.govdocH01L023/60zh_TW
dc.identifier.govdocH01L023/60zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104220-
dc.description.abstract本發明係提供一種用以靜電放電防護之矽控整流器,其包含:一第一電極和一第二電極做為兩極、一P型電晶體(PMOS)、一N型電晶體(NMOS)以及一矽控整流器(Silicon Controlled Rectifier,SCR)結構;係藉由利用電源間的寄生矽控整流器(SCR)以達到全晶片靜電放電防護電路設計(Whole–chip ESD protection design);其係適用於積體電路產品、IC設計產業以及晶圓代工產業。zh_TW
dc.language.isozh_TWen_US
dc.title用以靜電放電防護之矽控整流器zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200541039zh_TW
Appears in Collections:Patents


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