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dc.contributor.authorChuang Ching-Teen_US
dc.contributor.authorJou Shyh-Jyeen_US
dc.contributor.authorHwang Weien_US
dc.contributor.authorTsai Ming-Chienen_US
dc.contributor.authorLin Yi-Weien_US
dc.contributor.authorYang Hao-Ien_US
dc.contributor.authorTu Ming-Hsienen_US
dc.contributor.authorShih Wei-Chiangen_US
dc.contributor.authorLien Nan-Chunen_US
dc.contributor.authorLee Kuen-Dien_US
dc.date.accessioned2014-12-16T06:13:49Z-
dc.date.available2014-12-16T06:13:49Z-
dc.date.issued2014-08-12en_US
dc.identifier.govdocG11C007/04zh_TW
dc.identifier.govdocG11C029/12zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104354-
dc.description.abstractThe present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.zh_TW
dc.language.isozh_TWen_US
dc.titleOscillato based on a 6T SRAM for measuring the bias temperature instabilityzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08804445zh_TW
Appears in Collections:Patents


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