完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hou Tuo-Hung | en_US |
dc.contributor.author | Wu Shih-Chieh | en_US |
dc.date.accessioned | 2014-12-16T06:13:52Z | - |
dc.date.available | 2014-12-16T06:13:52Z | - |
dc.date.issued | 2014-04-01 | en_US |
dc.identifier.govdoc | G11C007/22 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104395 | - |
dc.description.abstract | This invention proposes a multi-bit resistive-switching memory cell and array thereof. Multiple conduction paths are formed on each memory cell and independent of each other, and each conduction path can be in a high-resistance or low-resistance state, so as to form a multi-bit resistive-switching memory cell. A memory cell array can be formed by arranging a plurality of multi-bit resistive-switching memory cells, and the memory cell array provides a simple, high density, high performance and cost-efficient proposal. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Multi-bit resistive-switching memory cell and array | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 08687432 | zh_TW |
顯示於類別: | 專利資料 |