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dc.contributor.authorChiu Yi-Teen_US
dc.contributor.authorChang Ming-Hungen_US
dc.contributor.authorYang Hao-Ien_US
dc.contributor.authorHwang Weien_US
dc.date.accessioned2014-12-16T06:13:59Z-
dc.date.available2014-12-16T06:13:59Z-
dc.date.issued2013-07-30en_US
dc.identifier.govdocG11C008/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104458-
dc.description.abstractAn innovative dual-port subthreshold static random access memory (SRAM) cell for sub-threshold voltage operation is disclosed. During write mode, the dual-port subthreshold SRAM cell would cut off the positive feedback loop of the inverters and utilize the reverse short-channel effect to enhance write capability. The single-ended read/write port structure further reduces power consumption of the lengthy bit line. Therefore, the dual-port subthreshold SRAM cell is a suitable for long operation in a first-in first-out memory system. Although the lower voltage reduces the stability of the memory cell, the dual-port subthreshold SRAM cell of the present invention can still stably operate.zh_TW
dc.language.isozh_TWen_US
dc.titleDual-port subthreshold SRAM cellzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08498174zh_TW
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