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dc.contributor.authorChen Shi-Wenen_US
dc.contributor.authorChang Ming-Hungen_US
dc.contributor.authorHsieh Wei-Chihen_US
dc.contributor.authorHwang Weien_US
dc.date.accessioned2014-12-16T06:14:03Z-
dc.date.available2014-12-16T06:14:03Z-
dc.date.issued2013-04-16en_US
dc.identifier.govdocH01L037/00zh_TW
dc.identifier.govdocH03K017/78zh_TW
dc.identifier.govdocG01K007/00zh_TW
dc.identifier.govdocH01L035/00zh_TW
dc.identifier.govdocH03K003/42zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104492-
dc.description.abstractA fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.zh_TW
dc.language.isozh_TWen_US
dc.titleFully-on-chip temperature, process, and voltage sensor systemzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08419274zh_TW
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