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dc.contributor.authorWei Kung-Hwaen_US
dc.contributor.authorSheu Jeng-Tzongen_US
dc.contributor.authorChen Chen-Chiaen_US
dc.contributor.authorChiu Mao-Yuanen_US
dc.date.accessioned2014-12-16T06:14:03Z-
dc.date.available2014-12-16T06:14:03Z-
dc.date.issued2013-03-05en_US
dc.identifier.govdocG01R031/26zh_TW
dc.identifier.govdocH01L021/66zh_TW
dc.identifier.govdocH01L021/00zh_TW
dc.identifier.govdocH01L051/40zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104503-
dc.description.abstractA method for measuring an optoelectronic memory device, includes: grounding a source electrode of the optoelectronic memory device; applying a drain electrode voltage to a drain electrode of the optoelectronic memory device and measuring a first current at the drain electrode; using an optical source to illuminate the optoelectronic memory device and measure a first and a second current at the drain electrode; and comparing the sizes of the first current and the second current so as to judge the functional parameters of the optoelectronic memory device.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for measuring optoelectronic memory devicezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08389302zh_TW
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