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dc.contributor.authorTzeng, Yu-Fenen_US
dc.contributor.authorLee, Yen-Chihen_US
dc.contributor.authorLee, Chi-Youngen_US
dc.contributor.authorLin, I.-Nanen_US
dc.contributor.authorChiu, Hsin-Tienen_US
dc.date.accessioned2014-12-08T15:13:31Z-
dc.date.available2014-12-08T15:13:31Z-
dc.date.issued2007-08-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2768880en_US
dc.identifier.urihttp://hdl.handle.net/11536/10450-
dc.description.abstractUltrananocrystalline diamond (UNCD) nanoemitters were synthesized by a microwave plasma enhanced chemical vapor deposition process using silicon nanowires (SiNWs) as the template. Preseeding markedly enhances the nucleation of diamond on the SiNW templates, resulting in UNCD grains of smaller size and uniform distribution, which leads to significantly improved electron field emission (EFE) properties. The EFE for UNCD nanoemitters can be turned on at (E(0))(UNCD-NE)=4.4 V/mu m, achieving large EFE current density, (J(e))(UNCD-NE)=13.9 mA/cm(2) at an applied field of 12 V/mu m, which is comparable with that of carbon nanotubes, but with much better processing reliability. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleOn the enhancement of field emission performance of ultrananocrystalline diamond coated nanoemittersen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2768880en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000248661400123-
dc.citation.woscount13-
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