標題: Multilayer substrate having gallium nitride layer and method for forming the same
作者: Chang Edward Yi
Hsiao Yu-Lin
Lu Jung-Chi
公開日期: 11-九月-2012
摘要: The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.
官方說明文件#: H01L021/00
URI: http://hdl.handle.net/11536/104545
專利國: USA
專利號碼: 08263425
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