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dc.contributor.authorMeng Hsin- Feien_US
dc.contributor.authorHorng Sheng-Fuen_US
dc.contributor.authorChao Yu-Chiangen_US
dc.contributor.authorChen Chun-Yuen_US
dc.contributor.authorLai Wei-Jenen_US
dc.date.accessioned2014-12-16T06:14:10Z-
dc.date.available2014-12-16T06:14:10Z-
dc.date.issued2012-09-04en_US
dc.identifier.govdocH01L029/84zh_TW
dc.identifier.govdocG01P015/08zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104549-
dc.description.abstractA pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.zh_TW
dc.language.isozh_TWen_US
dc.titlePressure detector and pressure detector arrayzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08258554zh_TW
Appears in Collections:Patents


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