標題: Enhanced, pumping energy transfer between si nanocrystals and erbium ions in Si-rich SiOx sputtered using Si/Er2O3 encapsulated SiO substrate
作者: Lin, Gong-Ru
Lin, Chun-Jung
Chen, Chia-Yang
光電工程學系
Department of Photonics
關鍵字: Erbium doped;silicon rich;silicon oxide;silicon nanocrystal;RF magnetron sputtering
公開日期: 1-八月-2007
摘要: We investigate the enhanced pumping energy transfer for near-infrared photoluminescence in highdensity Si nanocrystals (nc-Si) and Erbium ions co-cloped SiO, film, which is obtained by RF magnetron assistant sputtering the SiO target with partially encapsulated Si and Er2O, chips. In contrast to conventional approaches, the use of SiO instead of SiO2 or Si substrate facilitates the formation of nc-Si in the sputtered SiO,,, while the Er2O3 replaces the Er pellets to improves the Er3+ concentrations and prevent the precipitation of Er atoms in the nc-Si and Er3+ co-doped SiOx film. Er3+ ion concentration up to 0.325 atomic % is obtained in the SiOx:Er3+ film under a sputtering power of 100 Watts. Correlation between annealing parameters and energy transferring from nc-Si to Er3+ ions is demonstrated, which reveals an optimized annealing condition at 1000 degrees C for 240 min and highest energy transfer efficiency from 760 to 1535 nm by the nc-Si with size and density of 4.5 nm and loll cm(-3) is observed.
URI: http://dx.doi.org/10.1166/jnn.2007.867
http://hdl.handle.net/11536/10461
ISSN: 1533-4880
DOI: 10.1166/jnn.2007.867
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 7
Issue: 8
起始頁: 2847
結束頁: 2851
顯示於類別:期刊論文