Title: Dual-threshold-voltage two-port sub-threshold SRAM cell apparatus
Authors: Chang Mu-Tien
Huang Po-Tsang
Hwang Wei
Issue Date: 6-Dec-2011
Abstract: The invention relates to a dual-threshold-voltage two-port sub-threshold SRAM cell apparatus. The above-mentioned apparatus comprises a first inverter, a second inverter, an access transistor and a read buffer. The first inverter and the second inverter include a plurality of first operating elements and a plurality of second operating elements for storing data. The access transistor is coupled to the first inverter and the second inverter, wherein the first operating elements and the second operating elements are high threshold voltage operating elements and the access transistor is low threshold voltage operating transistor. The read buffer is used for performing a read operation.
Gov't Doc #: G11C011/00
G11C007/00
G11C007/22
G11C008/00
URI: http://hdl.handle.net/11536/104624
Patent Country: USA
Patent Number: 08072818
Appears in Collections:Patents


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