Method for forming an interfacial passivation layer on the Ge semiconductor

Title:	Method for forming an interfacial passivation layer on the Ge semiconductor
Authors:	Liu Po-Tsun Huang Chen-Shuo Huang Yi-Ling Cheng Szu-Lin Sze Simon M. Nishi Yoshio
Issue Date:	6-Dec-2011
Abstract:	The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.
Gov't Doc #:	H01L021/20
URI:	http://hdl.handle.net/11536/104626
Patent Country:	USA
Patent Number:	08071458
Appears in Collections:	Patents

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