Method for forming an interfacial passivation layer on the Ge semiconductor

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu Po-Tsun	en_US
dc.contributor.author	Huang Chen-Shuo	en_US
dc.contributor.author	Huang Yi-Ling	en_US
dc.contributor.author	Cheng Szu-Lin	en_US
dc.contributor.author	Sze Simon M.	en_US
dc.contributor.author	Nishi Yoshio	en_US
dc.date.accessioned	2014-12-16T06:14:17Z	-
dc.date.available	2014-12-16T06:14:17Z	-
dc.date.issued	2011-12-06	en_US
dc.identifier.govdoc	H01L021/20	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104626	-
dc.description.abstract	The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Method for forming an interfacial passivation layer on the Ge semiconductor	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	08071458	zh_TW
顯示於類別：	專利資料

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