Method for forming an interfacial passivation layer on the Ge semiconductor

標題:	Method for forming an interfacial passivation layer on the Ge semiconductor
作者:	Liu Po-Tsun Huang Chen-Shuo Huang Yi-Ling Cheng Szu-Lin Sze Simon M. Nishi Yoshio
公開日期:	6-十二月-2011
摘要:	The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.
官方說明文件#:	H01L021/20
URI:	http://hdl.handle.net/11536/104626
專利國:	USA
專利號碼:	08071458
顯示於類別：	專利資料

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