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dc.contributor.authorChang Chun-Yenen_US
dc.contributor.authorYang Tsung Hsien_US
dc.date.accessioned2014-12-16T06:14:19Z-
dc.date.available2014-12-16T06:14:19Z-
dc.date.issued2011-07-12en_US
dc.identifier.govdocH01L029/26zh_TW
dc.identifier.govdocH01L031/12zh_TW
dc.identifier.govdocH01L033/00zh_TW
dc.identifier.govdocH01L029/18zh_TW
dc.identifier.govdocH01L027/15zh_TW
dc.identifier.govdocH01L029/267zh_TW
dc.identifier.govdocH01L021/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104652-
dc.description.abstractA light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.zh_TW
dc.language.isozh_TWen_US
dc.titleLight emitter devicezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07977687zh_TW
Appears in Collections:Patents


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