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dc.contributor.authorChiuen_US
dc.contributor.authorChing-Huaen_US
dc.contributor.authorHuangen_US
dc.contributor.authorHung-Wenen_US
dc.contributor.authorKuoen_US
dc.contributor.authorHao-Chungen_US
dc.contributor.authorLuen_US
dc.contributor.authorTien-Changen_US
dc.contributor.authorWangen_US
dc.contributor.authorShing-Chungen_US
dc.contributor.authorLaien_US
dc.contributor.authorChih-Mingen_US
dc.date.accessioned2014-12-16T06:14:22Z-
dc.date.available2014-12-16T06:14:22Z-
dc.date.issued2011-02-15en_US
dc.identifier.govdocH01L021/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104681-
dc.description.abstractA light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.zh_TW
dc.language.isozh_TWen_US
dc.titleLight-emitting device and method for making the samezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07888144zh_TW
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