Full metadata record
DC FieldValueLanguage
dc.contributor.authorKeren_US
dc.contributor.authorMing-Douen_US
dc.contributor.authorHsiaoen_US
dc.contributor.authorYuan-Wenen_US
dc.contributor.authorWangen_US
dc.contributor.authorChang-Tzuen_US
dc.date.accessioned2014-12-16T06:14:22Z-
dc.date.available2014-12-16T06:14:22Z-
dc.date.issued2011-02-01en_US
dc.identifier.govdocH01L029/66zh_TW
dc.identifier.govdocH01L023/62zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104684-
dc.description.abstractAn ESD protection device comprises a P-type substrate, a first substrate-triggered silicon controlled rectifiers (STSCR) disposed in the P-type substrate and a second STSCR disposed in the P-type substrate. The first STSCR comprises a first N-well, a first P-well, a first N+ diffusion region, a first P+ diffusion region, and a first trigger node. The second STSCR comprises a second N-well electrically connected to the first N-well, a second P-well electrically connected to the first P-well, a second N+ diffusion region electrically connected to the first P+ diffusion region, a second P+ diffusion region electrically connected to the first N+ diffusion region, and a second trigger node. A layout area of an integrated circuit and a pin-to-pin ESD current path can be reduced.zh_TW
dc.language.isozh_TWen_US
dc.titleElectrostatic discharge protection device and related circuitzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07880195zh_TW
Appears in Collections:Patents


Files in This Item:

  1. 07880195.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.