Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee | en_US |
dc.contributor.author | Cheng-Shih | en_US |
dc.contributor.author | Chang | en_US |
dc.contributor.author | Edward Yi | en_US |
dc.contributor.author | Chang | en_US |
dc.contributor.author | Huang-Choung | en_US |
dc.date.accessioned | 2014-12-16T06:14:22Z | - |
dc.date.available | 2014-12-16T06:14:22Z | - |
dc.date.issued | 2010-12-07 | en_US |
dc.identifier.govdoc | H01L021/70 | zh_TW |
dc.identifier.govdoc | H01L021/338 | zh_TW |
dc.identifier.govdoc | H01L023/52 | zh_TW |
dc.identifier.govdoc | H01L029/40 | zh_TW |
dc.identifier.govdoc | H01L023/48 | zh_TW |
dc.identifier.govdoc | H01L021/4763 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104688 | - |
dc.description.abstract | An interconnect of the group III-V semiconductor device and the fabrication method for making the same are described. The interconnect includes a first adhesion layer, a diffusion barrier layer for preventing the copper from diffusing, a second adhesion layer and a copper wire line. Because a stacked-layer structure of the first adhesion layer/diffusion barrier layer/second adhesion layer is located between the copper wire line and the group III-V semiconductor device, the adhesion between the diffusion barrier layer and other materials is improved. Therefore, the yield of the device is increased. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Interconnect of group III-V semiconductor device and fabrication method for making the same | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 07847410 | zh_TW |
Appears in Collections: | Patents |
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