標題: Silicon controlled rectifier
作者: Ker
MIng-Dou
Lin
Chun-Yu
Wang
Chang-Tzu
公開日期: 1-Sep-2009
摘要: A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well. The first conductive type well shaped as a polygonal ring surrounds the second conductive type well and the second conductive type doped region is located within the first conductive type well and shaped as a polygonal ring concentric to the first conductive type well.
官方說明文件#: H01L029/02
H01L029/66
H01L029/06
H01L029/74
URI: http://hdl.handle.net/11536/104741
專利國: USA
專利號碼: 07582916
Appears in Collections:Patents


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