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dc.contributor.authorLeeen_US
dc.contributor.authorCheng-Shihen_US
dc.contributor.authorChangen_US
dc.contributor.authorEdward Yien_US
dc.contributor.authorChenen_US
dc.contributor.authorKe-Shianen_US
dc.date.accessioned2014-12-16T06:14:30Z-
dc.date.available2014-12-16T06:14:30Z-
dc.date.issued2008-05-06en_US
dc.identifier.govdocH01L023/52zh_TW
dc.identifier.govdocH01L023/48zh_TW
dc.identifier.govdocH01L029/40zh_TW
dc.identifier.govdocH01L029/06zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104770-
dc.description.abstractThe present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.zh_TW
dc.language.isozh_TWen_US
dc.titleCopper metalized ohmic contact electrode of compound devicezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07368822zh_TW
Appears in Collections:Patents


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