Copper metalized ohmic contact electrode of compound device

標題:	Copper metalized ohmic contact electrode of compound device
作者:	Lee Cheng-Shih Chang Edward Yi Chen Ke-Shian
公開日期:	6-五月-2008
摘要:	The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.
官方說明文件#:	H01L023/52 H01L023/48 H01L029/40 H01L029/06
URI:	http://hdl.handle.net/11536/104770
專利國:	USA
專利號碼:	07368822
顯示於類別：	專利資料

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。