Full metadata record
DC FieldValueLanguage
dc.contributor.authorYehen_US
dc.contributor.authorChing-Faen_US
dc.contributor.authorChenen_US
dc.contributor.authorTien-Fuen_US
dc.contributor.authorLouen_US
dc.contributor.authorJen-Chungen_US
dc.date.accessioned2014-12-16T06:14:33Z-
dc.date.available2014-12-16T06:14:33Z-
dc.date.issued2006-10-03en_US
dc.identifier.govdocH01L021/00zh_TW
dc.identifier.govdocH01L021/84zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104801-
dc.description.abstractThe present invention provides a method for fabrication of polycrystalline silicon thin film transistors, which forms a silicon spacer on the sidewall of the active layer of a thin film transistor (TFT) by way of anisotropic plasma etching in a single direction. The silicon spacer provides a mechanism for laser recrystallization on the sidewall to prevent the active layer from shrinkage or shelling-off after the laser recrystallization. According to the present invention, large grains can be formed in the channel without additional mask during production. By doing so, the characteristics of the components are enhanced; the uniformity is improved; and, the production cost is lowered. Therefore, this technique will play an important role in the fields of low temperature polycrystalline silicon thin film transistor (LTPS-TFT).zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for fabrication of polycrystalline silicon thin film transistorszh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07115449zh_TW
Appears in Collections:Patents


Files in This Item:

  1. 07115449.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.