標題: | Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof |
作者: | Ker Ming-Dou Hsu Kuo-Chun |
公開日期: | 4-七月-2006 |
摘要: | A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal. |
官方說明文件#: | H01L029/66 H01L029/06 H01L023/62 H01L027/085 |
URI: | http://hdl.handle.net/11536/104810 |
專利國: | USA |
專利號碼: | 07071528 |
顯示於類別: | 專利資料 |