標題: Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof
作者: Ker
Ming-Dou
Hsu
Kuo-Chun
公開日期: 4-七月-2006
摘要: A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.
官方說明文件#: H01L029/66
H01L029/06
H01L023/62
H01L027/085
URI: http://hdl.handle.net/11536/104810
專利國: USA
專利號碼: 07071528
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