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dc.contributor.authorLeeen_US
dc.contributor.authorCheng-Shihen_US
dc.contributor.authorChangen_US
dc.contributor.authorYien_US
dc.date.accessioned2014-12-16T06:14:40Z-
dc.date.available2014-12-16T06:14:40Z-
dc.date.issued2004-09-07en_US
dc.identifier.govdocH01L023/48zh_TW
dc.identifier.govdocH01L023/52zh_TW
dc.identifier.govdocH01L029/47zh_TW
dc.identifier.govdocH01L029/40zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104841-
dc.description.abstractThe present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.zh_TW
dc.language.isozh_TWen_US
dc.titleSchottky structure in GaAs semiconductor devicezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber06787910zh_TW
Appears in Collections:Patents


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