Schottky structure in GaAs semiconductor device

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DC 欄位	值	語言
dc.contributor.author	Lee	en_US
dc.contributor.author	Cheng-Shih	en_US
dc.contributor.author	Chang	en_US
dc.contributor.author	Yi	en_US
dc.date.accessioned	2014-12-16T06:14:40Z	-
dc.date.available	2014-12-16T06:14:40Z	-
dc.date.issued	2004-09-07	en_US
dc.identifier.govdoc	H01L023/48	zh_TW
dc.identifier.govdoc	H01L023/52	zh_TW
dc.identifier.govdoc	H01L029/47	zh_TW
dc.identifier.govdoc	H01L029/40	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104841	-
dc.description.abstract	The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Schottky structure in GaAs semiconductor device	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	06787910	zh_TW
顯示於類別：	專利資料

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