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dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorLai, Yi-Shengen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.contributor.authorShye, Der-Chien_US
dc.contributor.authorHwang, Chuan-Chouen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:13:35Z-
dc.date.available2014-12-08T15:13:35Z-
dc.date.issued2007-08-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2007.05.005en_US
dc.identifier.urihttp://hdl.handle.net/11536/10486-
dc.description.abstractIn this article, we report the effect of excimer laser annealing (ELA) on the characteristics of (Pb,Sr)TiO(3) (PSrT) films. The unirradiated and irradiated films are characterized by atomic force microscope (AFM), X-ray photoelectron spectroscopy, X-ray diffractometer (XRD), transmission electron microscopy (TEM), and electron energy loss spectroscopy (EELS). It is found that the crystallinity is improved and the oxygen content is increased by ELA. Besides, the surface morphology becomes rough after ELA. Moreover, PSrT films irradiated by ELA are found to increase the grain size near the surface. The material properties of unirradiated and irradiated films, as well as the characteristics of PSrT films irradiated with various laser pulses, will be explored in this study. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffects of accumulated laser pulses on (Pb,Sr)TiO(3) films post-excimer laser annealed at low temperaturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2007.05.005en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume306en_US
dc.citation.issue1en_US
dc.citation.spage80en_US
dc.citation.epage85en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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