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dc.contributor.authorCHANG Lien_US
dc.contributor.authorCHEN Yu-Changen_US
dc.contributor.authorCHEN Jr-Yuen_US
dc.date.accessioned2014-12-16T06:14:46Z-
dc.date.available2014-12-16T06:14:46Z-
dc.date.issued2014-07-31en_US
dc.identifier.govdocC30B025/18zh_TW
dc.identifier.govdocC30B025/10zh_TW
dc.identifier.govdocC30B025/06zh_TW
dc.identifier.govdocC01B031/06zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104887-
dc.description.abstractThe present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.zh_TW
dc.language.isozh_TWen_US
dc.titleMETHOD OF GROWING DIAMOND THIN FILMzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20140209014zh_TW
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