完整後設資料紀錄
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dc.contributor.authorLee, YSen_US
dc.contributor.authorLiao, KSen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:02:22Z-
dc.date.available2014-12-08T15:02:22Z-
dc.date.issued1996-09-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://hdl.handle.net/11536/1048-
dc.description.abstractThe effect of sintering temperature on the microstructure and crystal phases of the intergranular praseodymium oxides in ZnO varistor ceramics was investigated using transmission electron microscopy and high-resolution electron microscopy. The ZnO grains were three-dimensionally separated from the intergranular praseodymium oxides. On the basis of microdiffraction analyses of the intergranular layer, the phase transformation from fcc-Pr6O11 into hcp-Pr2O3 was found when the sintering temperature increased from 1300 degrees to 1350 degrees C. The defect reaction equation and the decrease of donor concentration with increasing sintering temperature can verify the certainty of phase transition during the liquid-phase sintering observed by transmission elecron microscopy. Additionally, on the basis of the small variations of the breakdown voltage per grain boundary, the number of active grain boundaries is not a dominant factor for the donor concentration dependence on the sintering temperature.en_US
dc.language.isoen_USen_US
dc.titleMicrostructure and crystal phases of praseodymium oxides in zinc oxide varistor ceramicsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume79en_US
dc.citation.issue9en_US
dc.citation.spage2379en_US
dc.citation.epage2384en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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