完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen Fang-Chungen_US
dc.contributor.authorLin Shu-Chengen_US
dc.date.accessioned2014-12-16T06:14:59Z-
dc.date.available2014-12-16T06:14:59Z-
dc.date.issued2013-06-06en_US
dc.identifier.govdocH01L027/14zh_TW
dc.identifier.govdocH01L031/18zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105038-
dc.description.abstractA method for forming the photodiode device is provided. The method comprises providing a substrate, then a transparent conductive film is formed on the substrate. A conductive polymer is formed on the transparent conductive film. A photoactive layer is formed on the conductive polymer. A charge blocking layer is formed on the photoactive layer. Finally, a cathode metal is formed on the charge blocking layer.zh_TW
dc.language.isozh_TWen_US
dc.titlePHOTODIODE DEVICE FOR IMPROVING THE DETECTIVITY AND THE FORMING METHOD THEREOFzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20130140662zh_TW
顯示於類別:專利資料


文件中的檔案:

  1. 20130140662.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。