PHOTO SENSOR AND METHOD OF FABRICATING THE SAME

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DC Field	Value	Language
dc.contributor.author	Chen Chih	en_US
dc.contributor.author	Liu Chien-Min	en_US
dc.contributor.author	Tseng Yuan-Chieh	en_US
dc.date.accessioned	2014-12-16T06:15:02Z	-
dc.date.available	2014-12-16T06:15:02Z	-
dc.date.issued	2013-01-10	en_US
dc.identifier.govdoc	H01L031/0264	zh_TW
dc.identifier.govdoc	H01L031/18	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105089	-
dc.description.abstract	A photo sensor and a method of fabricating the same are disclosed, the photo sensor of the present invention has ultra-high Schottky junction area per unit volume, and the photo sensor comprises: a first conductive layer; plural metallic nanowires, in which one end of each metallic nanowire connects with the first conductive layer and is covered with a semiconductive layer having a width of 1 nm to 20 nm; and a second conductive layer locating opposite to the first conductive layer, whereby the plural metallic nanowires locate between the first conductive layer and the second conductive layer, and the semiconductive layer contacts with the second conductive layer, wherein the photo sensor of the present invention is used to detect ultra violet (UV) light with a wavelength of 10 nm-400 nm.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	PHOTO SENSOR AND METHOD OF FABRICATING THE SAME	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20130009143	zh_TW
Appears in Collections:	Patents

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