標題: Method for treating group III nitride semiconductor
作者: Lee Wei-I
Hsu Ying-Chia
Yeh Yen-Hsien
Chen Kuei-Ming
公開日期: 1-三月-2012
摘要: The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.
官方說明文件#: H01L021/306
URI: http://hdl.handle.net/11536/105206
專利國: USA
專利號碼: 20120052691
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