| 標題: | PHOTO TRANSISTOR |
| 作者: | ZAN HSIAO-WEN MENG HSIN-FEI TSAI CHUANG-CHUANG CHEN WEI-TSUNG CHAO YU-CHIANG |
| 公開日期: | 26-一月-2012 |
| 摘要: | A phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap. |
| 官方說明文件#: | H01L029/12 H01L031/113 |
| URI: | http://hdl.handle.net/11536/105222 |
| 專利國: | USA |
| 專利號碼: | 20120018719 |
| 顯示於類別: | 專利資料 |

