Full metadata record
DC FieldValueLanguage
dc.contributor.authorZAN HSIAO-WENen_US
dc.contributor.authorMENG HSIN-FEIen_US
dc.contributor.authorTSAI CHUANG-CHUANGen_US
dc.contributor.authorCHEN WEI-TSUNGen_US
dc.contributor.authorCHAO YU-CHIANGen_US
dc.date.accessioned2014-12-16T06:15:18Z-
dc.date.available2014-12-16T06:15:18Z-
dc.date.issued2012-01-26en_US
dc.identifier.govdocH01L029/12zh_TW
dc.identifier.govdocH01L031/113zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105222-
dc.description.abstractA phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap.zh_TW
dc.language.isozh_TWen_US
dc.titlePHOTO TRANSISTORzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20120018719zh_TW
Appears in Collections:Patents


Files in This Item:

  1. 20120018719.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.