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dc.contributor.authorGuo, Jyh-Chyurnen_US
dc.contributor.authorTan, Teng-Yangen_US
dc.date.accessioned2014-12-08T15:13:37Z-
dc.date.available2014-12-08T15:13:37Z-
dc.date.issued2007-08-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2007.900005en_US
dc.identifier.urihttp://hdl.handle.net/11536/10523-
dc.description.abstractA broadband and scalable 2-T model is developed to accurately simulate fully symmetric inductors with various dimensions. The 2-T model is defined to reflect the structure of an equivalent circuit with two identical T-model circuits. Two-step de-embedding is assisted by open and through pads for extraction of intrinsic characteristics. The accuracy is validated by 3-D fullwave electromagnetic simulation. A novel parameter extraction flow is established, and a single set of model parameters is derived to be valid for both single-ended and differentially driven topologies. The broadband accuracy is proven by a good match with S-parameters, L(omega), Re(Z(in)(omega)),and Q(omega) over frequencies up to 20 GHz. The scalability is justified by good fitting with either a linear or a parabolic function of spiral coil radii. Furthermore, all model parameters are frequency independent so as to ensure computation efficiency. This 2-T model consistently predicts the enhancement of Q(max) by 20%-30% for the symmetric inductors under a differential excitation. The Q improvement is even better than 100% over broader frequencies beyond f(m)(Q(max)).en_US
dc.language.isoen_USen_US
dc.subjectbroadbanden_US
dc.subjectdifferentialen_US
dc.subjectinductoren_US
dc.subjectscalableen_US
dc.subjectsingle enden_US
dc.subjectsymmetricen_US
dc.titleA broadband and scalable lumped element model for fully symmetric inductors under single-ended and differentially driven operationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2007.900005en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume54en_US
dc.citation.issue8en_US
dc.citation.spage1878en_US
dc.citation.epage1888en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000248390600010-
dc.citation.woscount2-
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