完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Shih-Wei | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Wang, Shing-Chung | en_US |
dc.date.accessioned | 2014-12-16T06:15:27Z | - |
dc.date.available | 2014-12-16T06:15:27Z | - |
dc.date.issued | 2011-02-24 | en_US |
dc.identifier.govdoc | H01S005/34 | zh_TW |
dc.identifier.govdoc | H01S005/323 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/105334 | - |
dc.description.abstract | A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | SURFACE-EMITTING LASER DEVICE | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20110044365 | zh_TW |
顯示於類別: | 專利資料 |