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dc.contributor.authorChang, S. J.en_US
dc.contributor.authorWu, K. Y.en_US
dc.contributor.authorYang, Y. H.en_US
dc.contributor.authorHwang, J.en_US
dc.contributor.authorWu, Hsin-Yingen_US
dc.contributor.authorPan, Ru-Pinen_US
dc.contributor.authorLee, A. P.en_US
dc.contributor.authorKou, C. S.en_US
dc.date.accessioned2014-12-08T15:13:38Z-
dc.date.available2014-12-08T15:13:38Z-
dc.date.issued2007-07-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2007.04.039en_US
dc.identifier.urihttp://hdl.handle.net/11536/10534-
dc.description.abstractA plasma ion immersion treatment has been developed to enhance the liquid crystal (LC) alignment on the hydrogenated amorphous carbon (a-C:H) layer in an inductively coupled plasma (ICP) chamber. No LC alignment was observed for the a-C:H layer tilted at an angle of 0 degrees during the bombardment with plasma ions. The LC alignment occurs for the a-C:H layer tilted at an angle of 30 degrees or 60 degrees. Their pretilt angles (similar to 1.4 degrees) are approximately the same. The azimuthal anchoring strength is 1.98 x 10(-6) J/m(2) at a tilted angle of 30 degrees and 1.14 x 10(-4) J/m(2) at a tilted angle of 60 degrees. The mechanism for the LC alignment is attributed to the oblique incidence of ions within the matrix sheath of non-uniform thickness near the a-C: H surface under a negative pulse bias. The matrix sheath of non-uniform thickness is confirmed by the plasma density distribution in the ICP chamber and the X-ray photoemission spectra across the a-C:H layer. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectliquid crystal alignmenten_US
dc.subjectamorphous carbonen_US
dc.subjectplasma ionen_US
dc.subjectx-ray photoemissionen_US
dc.titleLiquid crystal alignment on the a-C : H films by Ar plasma ion immersionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2007.04.039en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume515en_US
dc.citation.issue20-21en_US
dc.citation.spage8000en_US
dc.citation.epage8004en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000249308400044-
dc.citation.woscount1-
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