完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, J. M. | en_US |
dc.contributor.author | Chen, C. K. | en_US |
dc.contributor.author | Chou, T. L. | en_US |
dc.contributor.author | Jarrige, I. | en_US |
dc.contributor.author | Ishii, H. | en_US |
dc.contributor.author | Lu, K. T. | en_US |
dc.contributor.author | Cai, Y. Q. | en_US |
dc.contributor.author | Liang, K. S. | en_US |
dc.contributor.author | Lee, J. M. | en_US |
dc.contributor.author | Huang, S. W. | en_US |
dc.contributor.author | Yang, T. J. | en_US |
dc.contributor.author | Shen, C. C. | en_US |
dc.contributor.author | Liu, R. S. | en_US |
dc.contributor.author | Lin, J. Y. | en_US |
dc.contributor.author | Jeng, H. T. | en_US |
dc.contributor.author | Kao, C.-C. | en_US |
dc.date.accessioned | 2014-12-08T15:13:38Z | - |
dc.date.available | 2014-12-08T15:13:38Z | - |
dc.date.issued | 2007-07-30 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2762288 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10536 | - |
dc.description.abstract | The Mn 3d valence states in single-crystalline TbMnO3 were probed using x-ray absorption spectroscopy and resonant x-ray emission spectroscopy (RXES). The polarized Mn K-edge x-ray absorption spectra show a strong polarization dependence, particularly for the white line region, indicating the strong anisotropic Mn-O bonding within the ab plane in TbMnO3. The RXES data obtained at the Mn K edge clearly reveal that unoccupied Mn 3d states exhibit a relatively delocalized character, stemming from hybridization of the Mn 3d states with the neighboring Mn 4p orbitals. The authors demonstrated that resonant x-ray emission spectroscopy is able to characterize the degree of localization of the unoccupied states or hole carriers in manganites. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Resonant x-ray emission spectroscopy of multiferroic TbMnO3 | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2762288 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 91 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000248595800129 | - |
dc.citation.woscount | 9 | - |
顯示於類別: | 期刊論文 |