標題: OPTOELECTRONIC MEMORY DEVICE AND METHOD FOR MANUFACTURING AND MEASURING THE SAME
作者: WEI, Kung-Hwa
SHEU, Jeng-Tzong
CHEN, Chen-Chia
CHIU, Mao-Yuan
公開日期: 4-三月-2010
摘要: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.
官方說明文件#: G01R031/265
H01L031/0352
H01L031/0256
URI: http://hdl.handle.net/11536/105438
專利國: USA
專利號碼: 20100052654
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