Lasing characteristics of a GaN photonic crystal nanocavity light source

doi:10.1063/1.2759467

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DC 欄位	值	語言
dc.contributor.author	Lai, Chun-Feng	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Wang, Te-Chung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.contributor.author	Lee, Chao-Kuei	en_US
dc.date.accessioned	2014-12-08T15:13:39Z	-
dc.date.available	2014-12-08T15:13:39Z	-
dc.date.issued	2007-07-23	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2759467	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10549	-
dc.description.abstract	Lasing characteristics from photonic crystal defects fabricated on bulk GaN are investigated. The device demonstrates multimode lasing with linewidths as narrow as 2-3 angstrom, and an enhanced spontaneous emission factor beta similar to 0.045. The emission spectra indicate that the laser emission is initiated horizontally in the defect nanocavity and then coupled to the vertical radiation, possibly via photonic crystal Bloch modes or by scattering.	en_US
dc.language.iso	en_US	en_US
dc.title	Lasing characteristics of a GaN photonic crystal nanocavity light source	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2759467	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	91	en_US
dc.citation.issue	4	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000248345500001	-
dc.citation.woscount	9	-
顯示於類別：	期刊論文

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