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dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorWang, Te-Chungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorLee, Chao-Kueien_US
dc.date.accessioned2014-12-08T15:13:39Z-
dc.date.available2014-12-08T15:13:39Z-
dc.date.issued2007-07-23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2759467en_US
dc.identifier.urihttp://hdl.handle.net/11536/10549-
dc.description.abstractLasing characteristics from photonic crystal defects fabricated on bulk GaN are investigated. The device demonstrates multimode lasing with linewidths as narrow as 2-3 angstrom, and an enhanced spontaneous emission factor beta similar to 0.045. The emission spectra indicate that the laser emission is initiated horizontally in the defect nanocavity and then coupled to the vertical radiation, possibly via photonic crystal Bloch modes or by scattering.en_US
dc.language.isoen_USen_US
dc.titleLasing characteristics of a GaN photonic crystal nanocavity light sourceen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2759467en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000248345500001-
dc.citation.woscount9-
Appears in Collections:Articles


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