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dc.contributor.authorHuang, Po-Tsangen_US
dc.contributor.authorLiu, Wen-Yenen_US
dc.contributor.authorHwang, Weien_US
dc.date.accessioned2014-12-16T06:15:48Z-
dc.date.available2014-12-16T06:15:48Z-
dc.date.issued2009-06-25en_US
dc.identifier.govdocG11C015/00zh_TW
dc.identifier.govdocG11C005/14zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105517-
dc.description.abstractA leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode.zh_TW
dc.language.isozh_TWen_US
dc.titleLeakage current cut-off device for ternary content addressable memoryzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20090161400zh_TW
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