Leakage current cut-off device for ternary content addressable memory

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DC 欄位	值	語言
dc.contributor.author	Huang, Po-Tsang	en_US
dc.contributor.author	Liu, Wen-Yen	en_US
dc.contributor.author	Hwang, Wei	en_US
dc.date.accessioned	2014-12-16T06:15:48Z	-
dc.date.available	2014-12-16T06:15:48Z	-
dc.date.issued	2009-06-25	en_US
dc.identifier.govdoc	G11C015/00	zh_TW
dc.identifier.govdoc	G11C005/14	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105517	-
dc.description.abstract	A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Leakage current cut-off device for ternary content addressable memory	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20090161400	zh_TW
顯示於類別：	專利資料

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