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dc.contributor.authorCHIU, Ching-Huaen_US
dc.contributor.authorHUANG, Hung-Wenen_US
dc.contributor.authorKUO, Hao-Chungen_US
dc.contributor.authorLU, Tien-Changen_US
dc.contributor.authorWANG, Shing-Chungen_US
dc.contributor.authorLAI, Chih-Mingen_US
dc.date.accessioned2014-12-16T06:15:51Z-
dc.date.available2014-12-16T06:15:51Z-
dc.date.issued2009-01-22en_US
dc.identifier.govdocH01L033/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105551-
dc.description.abstractA light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.zh_TW
dc.language.isozh_TWen_US
dc.titleLIGHT-EMITTING DEVICE AND METHOD FOR MAKING THE SAMEzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20090020772zh_TW
Appears in Collections:Patents


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