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dc.contributor.authorLing, Hong-Shien_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2014-12-08T15:13:40Z-
dc.date.available2014-12-08T15:13:40Z-
dc.date.issued2007-07-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2761799en_US
dc.identifier.urihttp://hdl.handle.net/11536/10561-
dc.description.abstractThe evolution of InAs quantum ring (QR) formation and the corresponding optical properties were investigated by atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. Just like a nanoscale volcanic eruption, the transformation from quantum dots (QDs) to QRs using the capping and annealing process depends on how much InAs is removed from the center of the dots to the surrounding areas. The final structure was found to depend on the annealing temperature and the cap layer thickness. We have investigated the QR formation at different stages using various growth conditions. The findings provided a clear picture on the mechanism of ring formation. We were able to obtain QRs with various geometries by controlling these growth parameters. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEvolution of self-assembled InAs quantum ring formationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2761799en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume102en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000248485100100-
dc.citation.woscount25-
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