標題: GATE DIELECTRIC STRUCTURE AND AN ORGANIC THIN FILM TRANSISTOR BASED THEREON
作者: Chen, Fang-Chung
Chuang, Chiao-Shun
Lin, Yung-Sheng
公開日期: 20-九月-2007
摘要: A gate dielectric structure and an organic thin film transistor based thereon, wherein the gate dielectric structure comprises: an organic-inorganic composite layer and an organic insulation layer, and the gate dielectric structure is applied to an organic thin film transistor. As the organic-inorganic composite layer of the gate dielectric structure has an organic insulation matrix blended with inorganic surface-modified particles, it can achieve a high dielectric constant. Further, as the organic insulation layer can modify the surface of the organic-inorganic composite layer, not only the leakage current is reduced, but also the crystalline structure of the organic semiconductor layer becomes more orderly. Thus, the carrier mobility is raised, the current output of the element is increased, and the performance of the element is also greatly enhanced.
官方說明文件#: H01L029/94
H01L029/76
H01L031/00
URI: http://hdl.handle.net/11536/105636
專利國: USA
專利號碼: 20070215957
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