Copper metalized ohmic contact electrode of compound device

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DC 欄位	值	語言
dc.contributor.author	Lee, Cheng-Shih	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Chen, Ke-Shian	en_US
dc.date.accessioned	2014-12-16T06:16:05Z	-
dc.date.available	2014-12-16T06:16:05Z	-
dc.date.issued	2007-07-12	en_US
dc.identifier.govdoc	H01L023/48	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105645	-
dc.description.abstract	The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Copper metalized ohmic contact electrode of compound device	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20070158844	zh_TW
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