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dc.contributor.authorHuang, Genshengen_US
dc.contributor.authorYao, Hsin-Hungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-16T06:16:05Z-
dc.date.available2014-12-16T06:16:05Z-
dc.date.issued2007-06-07en_US
dc.identifier.govdocH01L021/00zh_TW
dc.identifier.govdocH01L033/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105652-
dc.description.abstractTo solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors.zh_TW
dc.language.isozh_TWen_US
dc.titleProcess of producing group III nitride based reflectorszh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20070128743zh_TW
Appears in Collections:Patents


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