Process of producing group III nitride based reflectors

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DC 欄位	值	語言
dc.contributor.author	Huang, Gensheng	en_US
dc.contributor.author	Yao, Hsin-Hung	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-16T06:16:05Z	-
dc.date.available	2014-12-16T06:16:05Z	-
dc.date.issued	2007-06-07	en_US
dc.identifier.govdoc	H01L021/00	zh_TW
dc.identifier.govdoc	H01L033/00	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105652	-
dc.description.abstract	To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Process of producing group III nitride based reflectors	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20070128743	zh_TW
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