標題: Method for forming gate pattern for electronic device
作者: Chen, Szu-Hung
Kuo, Chien-I
Chang, Edward Yi
公開日期: 22-三月-2007
摘要: A method for forming a gate pattern for an electronic device, comprising steps of: providing a substrate, whereon a first photo-resist layer is formed; performing a first photo-lithography process so as to form a first pattern with a first width on the substrate; forming a second photo-resist layer, covering the first pattern and the first photo-resist layer on the substrate; and performing a second photo-lithography process, which is shifted from the first photo-lithography process, so as to form a second pattern with a second width on the substrate; wherein the second width is smaller than the first width.
官方說明文件#: H01L021/4763
URI: http://hdl.handle.net/11536/105669
專利國: USA
專利號碼: 20070066051
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