標題: | Method for forming gate pattern for electronic device |
作者: | Chen, Szu-Hung Kuo, Chien-I Chang, Edward Yi |
公開日期: | 22-三月-2007 |
摘要: | A method for forming a gate pattern for an electronic device, comprising steps of: providing a substrate, whereon a first photo-resist layer is formed; performing a first photo-lithography process so as to form a first pattern with a first width on the substrate; forming a second photo-resist layer, covering the first pattern and the first photo-resist layer on the substrate; and performing a second photo-lithography process, which is shifted from the first photo-lithography process, so as to form a second pattern with a second width on the substrate; wherein the second width is smaller than the first width. |
官方說明文件#: | H01L021/4763 |
URI: | http://hdl.handle.net/11536/105669 |
專利國: | USA |
專利號碼: | 20070066051 |
顯示於類別: | 專利資料 |